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  j , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1141 description ? collector-emitter breakdown voltage- v(br)ceo=-115v(min) ? good linearity of hfe ? complement to type 2sc2681 applications ? audio frequency power amplifier ? high frequency power amplifier absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic i cm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ ta=25'c collector power dissipation @ tc=25'c junction temperature storage temperature range value -115 -115 -5 -10 -15 2.0 100 150 -55-150 unit v v v a a w "c r ^^^^^^p^^ i .;. -*'.< - 3 '?\: ??; ' pin: l.base ',. v ? "?? ,"?" ' 2. collector ":\? '? 3. emitter ?l 2 3 tc-3w package im^ ?uq,| ,? .ft!" i i ? 1 t k i b? - - c ? y* , f? -s .^v : ' ': -?"? j ?- -*-r km a b c d e f g h j k l n q r s u y mm min 19.60 15.50 4.70 0,90 1.90 3.40 2.90 3.20 0.595 19.80 1.90 10.89 4.90 3.35 1.995 5.90 9.90 max 20.30 15.70 4.90 1,10 2.10 3.60 3.20 3.40 0.605 20,70 2.20 10.91 5.10 3.45 2.100 6.20 10.10 *? -? g * ^l .?-.,,0 ^-tt-f nj seini-coiuluctors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. in formation furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. i louever. n.i semi-conductors assumes no responsibility for an\s or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placina orders. quality semi-conductors
silicon pnp power transistor 2SA1141 electrical characteristics tc=25'c unless otherwise specified symbol vce(sat) vse(on) icbo iebo hfe-1 hfe-2 cob fr parameter collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions lc= -4.5a; ib= -0.45a lc= -4.5a; vce= -2v vcb= -80v; l= 0 veb= -5v; lc= 0 lc=-1a;vce=-2v lc=-4.5a;vce=-2v le=0;vcb=-10v;f= 1.0mhz lc= -1a; vc6= -2v win 60 40 typ. 390 90 max -1.5 -2.0 -50 -50 200 unit v v ua ma pf mhz classifications r 60-120 q 100-200


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